|Electrostatic and Quantum Size Effects in Short Channel MOSFETs
|Year of Conference
|Troy, R, Szabo, A, Varonides, A
|HamSCI Workshop 2023
Two dimensional electrostatics and quantum size effects have become important features of modern short channel MOSFET device design where the surface potential becomes spatially dependent affecting the threshold voltage Several nanometer channel lengths between Source and Drain cause quantum effects that need to be addressed in modern MOSFET design. We present a model of electron transport in the 2D inversion layer, where (a) electrostatic and (b) quantum size effects are pointed out.